Samsung introduces blazing-fast 256GB UFS 2.0 flash memory

Samsung has announced that it has started mass producing 256GB ultra-fast embedded flash memory for the next-generation of high-end mobile devices. 

The memory chip is based on UFS 2.0 (Universal Flash Storage) that offers better sequential read and write performance, twice as fast as SATA SSD drives and 50 percent decrease in energy consumption.

It can also handle up to 45,000 and 40,000 input/output operation per second (IOPS) for random reading and writing respectively, that is twice as fast than the previous UFS memory which can hit 19,000 and 14,000 IOPS.

The new 256GB memory provides data read speed of up to 850Mbps, and sequential write speed of 260Mbps, which is three times faster than high-performance external microSD cards. 

This means that internal storage of future flagship smartphones will be fast enough to handle super-fast data transfers on devices with USB 3.0. Samsung says that the 256GB UFS chip can store 47 Full HD videos (avg. 90 minute movie file) and can send a 5GB video file in 12 seconds. 

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